Concentrator Lens SiC Based UV Photodiode - SG01L-5LENS
• Broadband UVA+UVB+UVC, PTB reported high chip stability, for flame detection
• Radiation sensitive area A = 55 mm2
• TO5 hermetically sealed metal housing with concentrator lens, 1 isolated pin and 1 case pin
• 10µW/cm2 peak radiation results a current of approx. 700 nA
• Dark Current: 3.5 fA
• Capacitance: 250 pF
• Responsivity Range: 221 … 358 nm
- Model Number: SG01L-5LENS
- Data Sheet:
- Quantity:
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Product Specification
SG01L-5LENS
Concentrator lens SiC based UV photodiode Avirtual = 55 mm2
◆ SG01L-5LENS UV Photodiod General Features
Properties of the SG01L-5LENS UV Photodiode
• Broadband UVA+UVB+UVC, PTB reported high chip stability, for flame detection
• Radiation sensitive area A = 55 mm2
• TO5 hermetically sealed metal housing with concentrator lens, 1 isolated pin and 1 case pin
• 10µW/cm2 peak radiation results a current of approx. 700 nA
About the material Silicon Carbide (SiC)
SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C (338°F). The temperature coeffcient of signal (responsivity) is also low, < 0.1%/K. Because of the low noise (dark current in the fA range), very low UV radiation intensities can be measured reliably.
Options
SiC photodiodes are available with seven different active chip areas from 0.06 mm2 up to 36 mm2 Standard version is broadband UVA-UVB-UVC. Four fltered versions lead to a tighter sensitivity range. All photodiodes have a hermetically sealed metal housing (TO type), either a 5.5 mm diameter TO18 housing or a 9.2 mm TO5 housing. Further option is either a 2 pin header (1 isolated, 1 grounded) or a 3 pin header (2 isolated, 1 grounded).
◆ SG01L-5LENS UV Photodiod Specifications
| Parameter | Symbol | Value | Unit |
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| Spectral Characteristics |
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| Typical Responsivity at Peak Wavelength | Smax | 0.130 | AW-1 |
| Wavelength of max. Spectral Responsivity | λmax | 280 | nm |
| Responsivity Range (S=0.1*Smax) | – | 221 … 358 | nm |
| Visible Blindness (Smax/S>405nm) | VB | > 1010 | – |
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| General Characteristics (T=25°C) |
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| Sensitive Area (chip size = 0.20 mm2) | A | 55 | mm2 |
| Dark Current (1V reverse bias) | Id | 3.5 | fA |
| Capacitance | C | 250 | pF |
| Short Circuit (10µW/cm2 at peak) | Io | 700 | nA |
| Temperature Coefficient | Tc | < 0.1 | %/K |
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| Maximum Ratings |
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| Operating Temperature | Topt | -55 … +170 | °C |
| Storage Temperature | Tstor | -55 … +170 | °C |
| Soldering Temperature (3s) | Tsold | 260 | °C |
| Reverse Voltage | VRmax | 20 | V |
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