GaN-based UV Photodiode - GS-ABC-2835S

• ​UVA+UVB+UVC photodiode
• ​Photovoltaic mode operation
• ​SMD 2835 package
• ​Good visible blindness
• ​High responsivity and low dark current

  • Model Number: GS-ABC-2835S
  • Data Sheet: Date Sheet File
Quantity:
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  • GaN-based UV Photodiode
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Product Specification

GS-ABC-2835S GaN-based UV Photodiode General Features:
• UVA+UVB+UVC photodiode
• Photovoltaic mode operation
• SMD 2835 package
• Good visible blindness
• High responsivity and low dark current

GS-ABC-2835S GaN-based UV Photodiode Applications:
UV index monitoring, UV radiation dose measurement, flame detection

GS-ABC-2835S GaN-based UV Photodiode Specifications:

Parameters
Symbol
Value
Unit
Maximum ratings
Operation temperature range
Topt
-25 - 85
°C
Storage temperature range
Tsto
-40 - 85
°C
Soldering temperature (3 s)
Tsol
260
°C
Reverse voltage
Vr-max
-10 V
General characteristics (25°C)

Chip size
A
0.11 mm2
Dark current (Vr = -1 V)
Id
<1
nA
Temperature coefficient
Tc
-0.02
%/°C
Capacitance (at 0 V and 1 MHz)
Cp
3.8 pF
Spectral response characteristics (25°C)
Wavelength of peak responsivisity
λp
355 nm
Peak responsivisity (at 355 nm)
Rmax
0.20 A/W
Spectral response range (R=0.1×Rmax)
- 210 - 370
nm
UV-visible rejection ratio (Rmax/R400 nm)
- >104
-

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