UV Photodiode - EOPD-150-0-2.5

• visible spectrum: 150 nm - 550 nm
• TO-39 package
• Active area​: 408 mm2
• Operating temperature range​: -40 to 125 ℃
• Breakdown voltage​: 5V (mim)
• Dark current​ (typ): 15pA
• Responsivity: 0.13A/W
• Sensitivity range: 150 ~ 550nm

  • Model Number: EOPD-150-0-2.5
  • Data Sheet: Date Sheet File
Quantity:
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  • UV Photodiode
  • UV Photodiode
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Product Specification

Radiation Type Technology
Case
VUV - visible Schottky contact
GaP
TO-39


EOPD-150-0-2.5 UV Photodiode Description:
Wide bandwidth and high sensitivity from VUV up to the visible spectrum (150 nm - 550 nm), mounted in hermetically sealed TO-39 package with sapphire window

EOPD-150-0-2.5 UV Photodiode Application:

Medical engineering (dermatology), output check of UV - lamps and oil or gas burner flame, measurement and control of ecological parameters, radiation control for a solarium, UV water purification facilities


EOPD-150-0-2.5 UV Photodiode Maximum Ratings

Tamb= 25°C, unless otherwise specified

Parameter Symbol Value Unit
Active area A 4.8 mm2
Temperature coefficient of dark current TC(ID) 7 %/K
Operating temperature range Tamb -40 to +125
Storage temperature range Tstg -40 to +125
Acceptance angle at 50% Sλ φ  120 deg.


EOPD-150-0-2.5 UV PhotodiodeOptical and Electrical Characteristics

Tamb = 25°C, unless otherwise specified

Parameter  Test conditions  Symbol Min Typ Max Unit
Breakdown voltage IR=10µA VR 5

V
Dark current VR=5V ID
15 40 pA
Peak sensitivity wavelength VR=0V λp
440
nm
Responsivity at λP VR=0V Sλ 0.1 0.13
A/W
Sensitivity range at 1% of Sλ VR=0V λmin , λmax 150
550 nm
Spectral bandwidth at 50%  VR=0V ∆λ0.5
180
nm
Shunt resistance  VR=10mV RSH 80 100
GΩ
Noise equivalent power  λ=440nm NEP
1.3 x 10-14
W/Hz
Specific detectivity λ=440nm D*
1.7 x 1013
cm ∙ Hz ∙ W-1
Junction capacitance VR =0V CJ 
1000
pF
Photocurrent at λ = 254 nm VR =0V Iph
2.5
µA
Ee =1 mW/cm²

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